Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides. molecular-beam heteroepitaxy of nominally 1. 0 eV bandgap bismide on Ge substrates is comprehensively investigated. https://www.alarecre.com/Music-Is-Freedom-Google-Pixel-7-Pro-Skin-p67850/